Growth and characterisation of Gd5(SixGe1−x)4 thin film

Thumbnail Image
Date
2013-01-01
Authors
Nlebedim, Cajetan
Melikhov, Y.
Major Professor
Advisor
Committee Member
Journal Title
Journal ISSN
Volume Title
Publisher
Authors
Person
Hadimani, Ravi
Affiliate Assistant Professor
Person
Jiles, David
Distinguished Professor Emeritus
Research Projects
Organizational Units
Organizational Unit
Electrical and Computer Engineering

The Department of Electrical and Computer Engineering (ECpE) contains two focuses. The focus on Electrical Engineering teaches students in the fields of control systems, electromagnetics and non-destructive evaluation, microelectronics, electric power & energy systems, and the like. The Computer Engineering focus teaches in the fields of software systems, embedded systems, networking, information security, computer architecture, etc.

History
The Department of Electrical Engineering was formed in 1909 from the division of the Department of Physics and Electrical Engineering. In 1985 its name changed to Department of Electrical Engineering and Computer Engineering. In 1995 it became the Department of Electrical and Computer Engineering.

Dates of Existence
1909-present

Historical Names

  • Department of Electrical Engineering (1909-1985)
  • Department of Electrical Engineering and Computer Engineering (1985-1995)

Related Units

Journal Issue
Is Version Of
Versions
Series
Abstract

We report for the first time successful growth of magnetic thin films containing the Gd5(Six Ge1−x)4 phase, which is expected to show giant magnetocaloric properties. The film wasdeposited by Pulsed Laser Deposition (PLD) on a (001) silicon wafer at 200  °C from a polycrystalline Gd5Si2.09 Ge 1.91 target prepared by arc melting. PLD was achieved using a femto second laser with a repetition rate of 1 kHz, and a pulse energy of up to 3.5 mJ. The average film thickness was measured to be 400 nm using a Scanning Electron Microscopy and the composition of the film was analyzed using Energy Dispersive Spectroscopy and found to be close to the target composition. X-Ray Diffraction analysis confirmed the presence of Gd5Si2Ge 2 monoclinic structure. Magnetic moment vs. magnetic field measurement confirmed that the film was ferromagnetic at a temperature of 200 K. The transition temperature of the film was determined from a plot of magnetic moment vs. temperature. The transition temperature was between 280 and 300 K which is close to the transition temperature of the bulk material.

Comments

The following article appeared in Journal of Applied Physics 113 (2013): 17A935 and may be found at http://dx.doi.org/10.1063/1.4799975.

Description
Keywords
Citation
DOI
Copyright
Tue Jan 01 00:00:00 UTC 2013
Collections