Growth and characterisation of Gd5(SixGe1−x)4 thin film

Date
2013-01-01
Authors
Hadimani, Ravi
Hadimani, Ravi
Jiles, David
Nlebedim, Cajetan
Melikhov, Y.
Jiles, David
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Abstract

We report for the first time successful growth of magnetic thin films containing the Gd5(Six Ge1−x)4 phase, which is expected to show giant magnetocaloric properties. The film wasdeposited by Pulsed Laser Deposition (PLD) on a (001) silicon wafer at 200  °C from a polycrystalline Gd5Si2.09 Ge 1.91 target prepared by arc melting. PLD was achieved using a femto second laser with a repetition rate of 1 kHz, and a pulse energy of up to 3.5 mJ. The average film thickness was measured to be 400 nm using a Scanning Electron Microscopy and the composition of the film was analyzed using Energy Dispersive Spectroscopy and found to be close to the target composition. X-Ray Diffraction analysis confirmed the presence of Gd5Si2Ge 2 monoclinic structure. Magnetic moment vs. magnetic field measurement confirmed that the film was ferromagnetic at a temperature of 200 K. The transition temperature of the film was determined from a plot of magnetic moment vs. temperature. The transition temperature was between 280 and 300 K which is close to the transition temperature of the bulk material.

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<p>The following article appeared in <em>Journal of Applied Physics</em> 113 (2013): 17A935 and may be found at <a href="http://dx.doi.org/10.1063/1.4799975" target="_blank">http://dx.doi.org/10.1063/1.4799975</a>.</p>
Keywords
Ames Laboratory, Germanium, Pulsed laser deposition, Thin films, Magnetic films, Magnetic moments
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