Monolithic finite gain amplifiers employing active voltage attenuators in the feedback and a charge conserving macromodel for MOSFETs

dc.contributor.advisor Randall L. Geiger
dc.contributor.author Kim, Joon-Yub
dc.contributor.department Electrical and Computer Engineering
dc.date 2018-08-23T15:59:03.000
dc.date.accessioned 2020-06-30T07:09:51Z
dc.date.available 2020-06-30T07:09:51Z
dc.date.copyright Sun Jan 01 00:00:00 UTC 1995
dc.date.issued 1995
dc.description.abstract <p>Two separate topics, both focused on analog and mixed signal monolithic circuit design, are presented. The first concentrates on the design of monolithic finite gain amplifiers employing active voltage attenuators in the feedback loop. Three MOS active voltage attenuators suitable for realizing finite gain amplifiers along with an operational amplifier are investigated. Monolithic single input amplifiers, two or more input summing/subtracting amplifiers, and differential amplifiers are readily attainable with this approach. The attenuators and amplifiers are theoretically analyzed, simulated on SPICE, and experimentally characterized in the laboratory. The performance of the attenuators and amplifiers is characterized with experiments by measuring the accuracy of the gain, the range of the linear operating region, and the degree of linearity. It is verified experimentally that amplifiers can be built with gains that are accurate to 0.5-2% of the design value. A differential amplifier designed in a single 5V process was experimentally characterized and exhibited a maximum signal output to total non-signal output ratio of 66.2dB at an output amplitude of 482mV (0-P);The second topic concentrates on developing a charge conserving macromodel for MOSFETs. The mechanisms which make MOSFET switches inject charge is reviewed. Based on the review and the nature of the parasitic capacitances in the MOSFET, a charge conserving macromodel is developed. This macromodel provides a convenient and accurate means for simulating the non-ideal effects of charge injection of MOSFET switches. A simple sample-and-hold circuit for characterizing the accuracy of the macromodel was designed, fabricated, and tested. Experimental results for this test circuit showed a maximum difference between the simulated and measured errors of 1.31 mV over a wide range of input voltages.</p>
dc.format.mimetype application/pdf
dc.identifier archive/lib.dr.iastate.edu/rtd/11062/
dc.identifier.articleid 12061
dc.identifier.contextkey 6430615
dc.identifier.doi https://doi.org/10.31274/rtd-180813-10186
dc.identifier.s3bucket isulib-bepress-aws-west
dc.identifier.submissionpath rtd/11062
dc.identifier.uri https://dr.lib.iastate.edu/handle/20.500.12876/64278
dc.language.iso en
dc.source.bitstream archive/lib.dr.iastate.edu/rtd/11062/r_9610963.pdf|||Fri Jan 14 18:41:30 UTC 2022
dc.subject.disciplines Electrical and Electronics
dc.subject.keywords Electrical and computer engineering
dc.subject.keywords Electrical engineering (Microelectronics)
dc.subject.keywords Microelectronics
dc.title Monolithic finite gain amplifiers employing active voltage attenuators in the feedback and a charge conserving macromodel for MOSFETs
dc.type article
dc.type.genre dissertation
dspace.entity.type Publication
relation.isOrgUnitOfPublication a75a044c-d11e-44cd-af4f-dab1d83339ff
thesis.degree.level dissertation
thesis.degree.name Doctor of Philosophy
File
Original bundle
Now showing 1 - 1 of 1
No Thumbnail Available
Name:
r_9610963.pdf
Size:
2.52 MB
Format:
Adobe Portable Document Format
Description: