Formation of Irregular Al Islands by Room-Temperature Deposition on NiAl(110)

Date
2011-01-01
Authors
Jing, Dapeng
Han, Yong
Ünal, Bariş
Evans, J
Thiel, Patricia
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Altmetrics
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Research Projects
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Ames Laboratory
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Abstract

STM studies reveal that irregular non-equilibrium two-dimensional Al islands form during deposition of Al on NiAl(110) at 300 K. These structures reflect the multiple adsorption sites and diffusion paths available for Al adatoms on the binary alloy surface, as well as the details of inhibited edge diffusion and detachment-attachment kinetics of Al adatoms for numerous distinct step edge configurations. We attempt to capture these features by multi-site lattice-gas modeling incorporating DFT energetics for adatoms both at adsorption sites and transition states. This formulation enables description and elucidation of the observed island growth shapes.

Description

This article is from Symposium SS/TT/UU/VV – Advances in Spectroscopy and Imaging of Surfaces and Nanostructures 1314 (2011): pp. 73—78, doi:10.1557/opl.2011.484

Keywords
Chemistry, Materials Science and Engineering
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