Low noise narrow-band amplification with field effect transistors

dc.contributor.author Mourlan, Louis
dc.contributor.author Rhinehart, Wayne
dc.contributor.department Ames Laboratory
dc.date 2018-02-13T17:06:24.000
dc.date.accessioned 2020-06-29T23:20:29Z
dc.date.available 2020-06-29T23:20:29Z
dc.date.embargo 2013-11-07
dc.date.issued 1965-02-01
dc.description.abstract <p>Scientists and engineers are often confronted with the problem of detecting the presence of signal levels which approach the noise levels in available amplifying devices. This paper describes the factors which limit amplifier sensitivity and explains what the circuit designer can do to maximize sensitivity.</p>
dc.format.mimetype application/pdf
dc.identifier archive/lib.dr.iastate.edu/ameslab_isreports/94/
dc.identifier.articleid 1101
dc.identifier.contextkey 4803965
dc.identifier.s3bucket isulib-bepress-aws-west
dc.identifier.submissionpath ameslab_isreports/94
dc.identifier.uri https://dr.lib.iastate.edu/handle/20.500.12876/7006
dc.language.iso en
dc.relation.ispartofseries IS-1152
dc.source.bitstream archive/lib.dr.iastate.edu/ameslab_isreports/94/17_01_00_06_AmesLab_IS_1152_o.pdf|||Sat Jan 15 02:32:19 UTC 2022
dc.subject.disciplines Engineering
dc.title Low noise narrow-band amplification with field effect transistors
dc.type article
dc.type.genre report
dspace.entity.type Publication
relation.isOrgUnitOfPublication 25913818-6714-4be5-89a6-f70c8facdf7e
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