Low noise narrow-band amplification with field effect transistors

dc.contributor.author	Mourlan, Louis
dc.contributor.author	Rhinehart, Wayne
dc.contributor.department	Ames National Laboratory
dc.date	2018-02-13T17:06:24.000
dc.date.accessioned	2020-06-29T23:20:29Z
dc.date.available	2020-06-29T23:20:29Z
dc.date.embargo	2013-11-07
dc.date.issued	1965-02-01
dc.description.abstract	<p>Scientists and engineers are often confronted with the problem of detecting the presence of signal levels which approach the noise levels in available amplifying devices. This paper describes the factors which limit amplifier sensitivity and explains what the circuit designer can do to maximize sensitivity.</p>
dc.format.mimetype	application/pdf
dc.identifier	archive/lib.dr.iastate.edu/ameslab_isreports/94/
dc.identifier.articleid	1101
dc.identifier.contextkey	4803965
dc.identifier.s3bucket	isulib-bepress-aws-west
dc.identifier.submissionpath	ameslab_isreports/94
dc.identifier.uri	https://dr.lib.iastate.edu/handle/20.500.12876/7006
dc.language.iso	en
dc.relation.ispartofseries	IS-1152
dc.source.bitstream	archive/lib.dr.iastate.edu/ameslab_isreports/94/17_01_00_06_AmesLab_IS_1152_o.pdf\|\|\|Sat Jan 15 02:32:19 UTC 2022
dc.subject.disciplines	Engineering
dc.title	Low noise narrow-band amplification with field effect transistors
dc.type	article
dc.type.genre	report
dspace.entity.type	Publication
relation.isOrgUnitOfPublication	25913818-6714-4be5-89a6-f70c8facdf7e

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