High pressures and the Kondo gap in Ce3Bi4Pt3

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1997-CanfieldPaul-HighPressures.pdf (102.83 KB)

Date

1997-03-15

Authors

Cooley, JC
Aronson, MC
Canfield, Paul

Publisher

American Physical Society

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Authors

Canfield, Paul

Person

Organizational Units

Physics and Astronomy

Organizational Unit

Ames Laboratory

Organizational Unit

Department

Physics and Astronomy

Abstract

We have measured the electrical resistivity p(T) of single crystals of Ce-3Bi4Pt3 for temperatures from 1.2 to 300 K, and pressures from I bar to 145 kbar. The transport is dominated at high temperatures by excitations across a small activation gap a, which increases rapidly with pressure. The low-temperature transport involves variable range hopping among extrinsic states in the gap. The spatial extent of the in-gap states reflects coupling to conduction-electron states, and is strongly modified as pressure enhances Delta. Despite the strong pressure dependence of Delta, a direct correspondence between single-ion energetics and the measured gap is maintained, and the role of valence fluctuations is minimal even at the highest pressures.

Comments

This article is published as Cooley, J. C., M. C. Aronson, and P. C. Canfield. "High pressures and the Kondo gap in Ce3Bi4Pt3." Physical Review B 55, no. 12 (1997): 7533. DOI: 10.1103/PhysRevB.55.7533. Copyright 1997 American Physical Society. Posted with permission.