Note on the determination of the magnetoresistance tensor of a crystal having the symmetry Oh or O
Date
1960
Authors
Okada, Toshihiro
Major Professor
Advisor
Committee Member
Journal Title
Journal ISSN
Volume Title
Publisher
Authors
Research Projects
Organizational Units
Organizational Unit
Journal Issue
Is Version Of
Versions
Series
Department
Ames Laboratory
Abstract
In order to get some information about the band structure of conduction electrons or holes it is often desirable to measure the magnetoresistance effect. This note describes a practical method for the determination of the three components of the magnetoresistance tensor for crystals having the point group symmetry Oh or 0 . The methods, which depend upon equations (IIIa), (IIIb) or (IIc) in this note, are most convenient for crystals having a cleavage plane (100), (110) or (111) . In this case, all the tensor components can be obtained by means of a single experimental run.