Pulsed laser ablation and micromachining of 4H and 6H SiC wafers for high-temperature MEMS sensors

dc.contributor.advisor Palaniappa A. Molian
dc.contributor.author Gupta, Saurabh
dc.contributor.department Mechanical Engineering
dc.date 2018-08-11T10:56:36.000
dc.date.accessioned 2020-06-30T02:31:34Z
dc.date.available 2020-06-30T02:31:34Z
dc.date.copyright Tue Jan 01 00:00:00 UTC 2008
dc.date.embargo 2013-06-05
dc.date.issued 2008-01-01
dc.description.abstract <p>This thesis provides a scientific investigation of the ablation behavior of single crystal 4H-SiC and 6H-SiC to improve the manufacturability and high-temperature performance of SiC based MEMS pressure sensors using laser applications. The ablation characteristics of both the polytypes were studied using pulsed lasers and micromachining results were presented. The study shows the possibility of these devices capable of operating in harsh environments.</p>
dc.format.mimetype application/pdf
dc.identifier archive/lib.dr.iastate.edu/etd/10866/
dc.identifier.articleid 1938
dc.identifier.contextkey 2807136
dc.identifier.doi https://doi.org/10.31274/etd-180810-2407
dc.identifier.s3bucket isulib-bepress-aws-west
dc.identifier.submissionpath etd/10866
dc.identifier.uri https://dr.lib.iastate.edu/handle/20.500.12876/25072
dc.language.iso en
dc.source.bitstream archive/lib.dr.iastate.edu/etd/10866/Gupta_iastate_0097M_10034.pdf|||Fri Jan 14 18:29:37 UTC 2022
dc.subject.disciplines Mechanical Engineering
dc.title Pulsed laser ablation and micromachining of 4H and 6H SiC wafers for high-temperature MEMS sensors
dc.type article
dc.type.genre thesis
dspace.entity.type Publication
relation.isOrgUnitOfPublication 6d38ab0f-8cc2-4ad3-90b1-67a60c5a6f59
thesis.degree.level thesis
thesis.degree.name Master of Science
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