Ultrasonic Sensing Simulation of CdTe Single Crystal Growth

dc.contributor.author Lu, Yichi
dc.contributor.author Wadley, Haydn
dc.date 2018-02-14T04:26:19.000
dc.date.accessioned 2020-06-30T06:40:51Z
dc.date.available 2020-06-30T06:40:51Z
dc.date.copyright Fri Jan 01 00:00:00 UTC 1993
dc.date.issued 1993
dc.description.abstract <p>Today’s infrared detector arrays consist of Hg1-xCdxTe deposited upon lattice matched Cd1-xZnxTe substrate wafers. Very high quality Cd1-xZnxTe crystals must be grown so that substrate wafer defects do not degrade the detector’s performance. Usually, the Cd1-xZnxTe crystals are grown by a Bridgman technique in which a charge is melted in a cylindrical quartz ampoule and slowly withdrawn from the hot zone (at ~ 1100°C) of a furnace.1 The best quality crystal is obtained from material solidified under plane front conditions.2 This is difficult to achieve, and a need has arisen for insitu sensing of the growth process to characterize, and ultimately control, the interface shape.</p>
dc.format.mimetype application/pdf
dc.identifier archive/lib.dr.iastate.edu/qnde/1993/allcontent/219/
dc.identifier.articleid 1793
dc.identifier.contextkey 5783591
dc.identifier.s3bucket isulib-bepress-aws-west
dc.identifier.submissionpath qnde/1993/allcontent/219
dc.identifier.uri https://dr.lib.iastate.edu/handle/20.500.12876/60179
dc.language.iso en
dc.source.bitstream archive/lib.dr.iastate.edu/qnde/1993/allcontent/219/1993_Lu_UltrasonicSensing.pdf|||Fri Jan 14 22:39:22 UTC 2022
dc.source.uri 10.1007/978-1-4615-2848-7_219
dc.subject.disciplines Acoustics, Dynamics, and Controls
dc.subject.disciplines Ceramic Materials
dc.subject.disciplines Semiconductor and Optical Materials
dc.title Ultrasonic Sensing Simulation of CdTe Single Crystal Growth
dc.type event
dc.type.genre article
dspace.entity.type Publication
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