Ultrasonic Sensing Simulation of CdTe Single Crystal Growth

Abstract

<p>Today’s infrared detector arrays consist of Hg1-xCdxTe deposited upon lattice matched Cd1-xZnxTe substrate wafers. Very high quality Cd1-xZnxTe crystals must be grown so that substrate wafer defects do not degrade the detector’s performance. Usually, the Cd1-xZnxTe crystals are grown by a Bridgman technique in which a charge is melted in a cylindrical quartz ampoule and slowly withdrawn from the hot zone (at ~ 1100°C) of a furnace.1 The best quality crystal is obtained from material solidified under plane front conditions.2 This is difficult to achieve, and a need has arisen for insitu sensing of the growth process to characterize, and ultimately control, the interface shape.</p>