Ultrasonic Sensing Simulation of CdTe Single Crystal Growth

dc.contributor.author Lu, Yichi
dc.contributor.author Wadley, Haydn
dc.date 2018-02-14T04:26:19.000
dc.date.accessioned 2020-06-30T06:40:51Z
dc.date.available 2020-06-30T06:40:51Z
dc.date.copyright Fri Jan 01 00:00:00 UTC 1993
dc.date.issued 1993
dc.description.abstract <p>Today’s infrared detector arrays consist of Hg1-xCdxTe deposited upon lattice matched Cd1-xZnxTe substrate wafers. Very high quality Cd1-xZnxTe crystals must be grown so that substrate wafer defects do not degrade the detector’s performance. Usually, the Cd1-xZnxTe crystals are grown by a Bridgman technique in which a charge is melted in a cylindrical quartz ampoule and slowly withdrawn from the hot zone (at ~ 1100°C) of a furnace.1 The best quality crystal is obtained from material solidified under plane front conditions.2 This is difficult to achieve, and a need has arisen for insitu sensing of the growth process to characterize, and ultimately control, the interface shape.</p>
dc.format.mimetype application/pdf
dc.identifier archive/lib.dr.iastate.edu/qnde/1993/allcontent/219/
dc.identifier.articleid 1793
dc.identifier.contextkey 5783591
dc.identifier.s3bucket isulib-bepress-aws-west
dc.identifier.submissionpath qnde/1993/allcontent/219
dc.identifier.uri https://dr.lib.iastate.edu/handle/20.500.12876/60179
dc.language.iso en
dc.relation.ispartofseries Review of Progress in Quantitative Nondestructive Evaluation
dc.source.bitstream archive/lib.dr.iastate.edu/qnde/1993/allcontent/219/1993_Lu_UltrasonicSensing.pdf|||Fri Jan 14 22:39:22 UTC 2022
dc.source.uri 10.1007/978-1-4615-2848-7_219
dc.subject.disciplines Acoustics, Dynamics, and Controls
dc.subject.disciplines Ceramic Materials
dc.subject.disciplines Semiconductor and Optical Materials
dc.title Ultrasonic Sensing Simulation of CdTe Single Crystal Growth
dc.type event
dc.type.genre article
dspace.entity.type Publication
relation.isSeriesOfPublication 289a28b5-887e-4ddb-8c51-a88d07ebc3f3
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