Probing thickness-dependent dislocation storage in freestanding Cu films using residual electrical resistivity

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2008-01-01
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Chauhan, Shakti
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Bastawros, Ashraf
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Aerospace Engineering

The Department of Aerospace Engineering seeks to instruct the design, analysis, testing, and operation of vehicles which operate in air, water, or space, including studies of aerodynamics, structure mechanics, propulsion, and the like.

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The Department of Aerospace Engineering was organized as the Department of Aeronautical Engineering in 1942. Its name was changed to the Department of Aerospace Engineering in 1961. In 1990, the department absorbed the Department of Engineering Science and Mechanics and became the Department of Aerospace Engineering and Engineering Mechanics. In 2003 the name was changed back to the Department of Aerospace Engineering.

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1942-present

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  • Department of Aerospace Engineering and Engineering Mechanics (1990-2003)

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Residual electrical resistivitymeasurement is employed to study dislocation storage under tensile loading of freestanding electroplated Cufilms (1–5μm grain size and 2–50μm thickness). The results indicate that the nature of thickness effects (strengthening or weakening) depends on the underlying deformation mechanisms via the average grain size. A threshold grain size of about dg=5μm is identified to distinguish grain size effects in thicker films from those in thinner films. For dg>5μm, diminishing microstructural constraint with reduced thickness weakens the films due to dislocation annihilation near the free surface. For dg<5μm, reduction of film thickness leads to strengthening via grain boundary-source starvation.

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The following article appeared in Applied Physics Letters 93 (2008): 041901 and may be found at doi: 10.1063/1.2961006.

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Tue Jan 01 00:00:00 UTC 2008
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