Direct Determination of Sizes of Excitations from Optical Measurements on Ion-Implanted GaAs
Kelso, S. M.
Olson, C. G.
Using a simple model that describes the decrease of the amplitudes of optical structures in ion-implanted crystals, projected areas of several valence and core excitons in GaAs are determined. The last remnant of crystal-related optical structure vanishes for crystallite areas less than (16Å)2.
This article is from Physical Review Letters 48 (1982): 1863, doi:10.1103/PhysRevLett.48.1863. Posted with permission.