Direct Determination of Sizes of Excitations from Optical Measurements on Ion-Implanted GaAs

Date
1982-06-01
Authors
Aspnes, D. E.
Kelso, S. M.
Olson, C. G.
Lynch, David
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Altmetrics
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Research Projects
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Physics and Astronomy
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Abstract

Using a simple model that describes the decrease of the amplitudes of optical structures in ion-implanted crystals, projected areas of several valence and core excitons in GaAs are determined. The last remnant of crystal-related optical structure vanishes for crystallite areas less than (16Å)2.

Description

This article is from Physical Review Letters 48 (1982): 1863, doi:10.1103/PhysRevLett.48.1863. Posted with permission.

Keywords
Ames Laboratory, ion-implanted, excitons
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