Direct Determination of Sizes of Excitations from Optical Measurements on Ion-Implanted GaAs Aspnes, D. E. Kelso, S. M. Lynch, David Olson, C. G. Lynch, David
dc.contributor.department Physics and Astronomy 2018-02-15T18:30:59.000 2020-06-30T06:21:21Z 2020-06-30T06:21:21Z Fri Jan 01 00:00:00 UTC 1982 2015-01-20 1982-06-01
dc.description.abstract <p>Using a simple model that describes the decrease of the amplitudes of optical structures in ion-implanted crystals, projected areas of several valence and core excitons in GaAs are determined. The last remnant of crystal-related optical structure vanishes for crystallite areas less than (16Å)2.</p>
dc.description.comments <p>This article is from <em>Physical Review Letters</em> 48 (1982): 1863, doi:<a href="" target="_blank">10.1103/PhysRevLett.48.1863</a>. Posted with permission.</p>
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dc.identifier archive/
dc.identifier.articleid 1068
dc.identifier.contextkey 6546276
dc.identifier.s3bucket isulib-bepress-aws-west
dc.identifier.submissionpath physastro_pubs/65
dc.language.iso en
dc.source.bitstream archive/|||Sat Jan 15 01:23:28 UTC 2022
dc.source.uri 10.1103/PhysRevLett.48.1863
dc.subject.disciplines Atomic, Molecular and Optical Physics
dc.subject.disciplines Physics
dc.subject.keywords Ames Laboratory
dc.subject.keywords ion-implanted
dc.subject.keywords excitons
dc.title Direct Determination of Sizes of Excitations from Optical Measurements on Ion-Implanted GaAs
dc.type article
dc.type.genre article
dspace.entity.type Publication
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relation.isOrgUnitOfPublication 4a05cd4d-8749-4cff-96b1-32eca381d930
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