Sierpiński Structure and Electronic Topology in Bi Thin Films on InSb(111)B Surfaces

Date
2021-04-30
Authors
Liu, Chen
Zhou, Yinong
Wang, Guanyong
Evans, James
Yin, Yin
Li, Can
Huang, Haili
Guan, Dandan
Li, Yaoyi
Wang, Shiyong
Zheng, Hao
Liu, Canhua
Han, Yong
Evans, James
Liu, Feng
Jia, Jinfeng
Major Professor
Advisor
Committee Member
Journal Title
Journal ISSN
Volume Title
Publisher
Altmetrics
Authors
Research Projects
Organizational Units
Ames Laboratory
Organizational Unit
Physics and Astronomy
Organizational Unit
Journal Issue
Series
Department
Ames LaboratoryPhysics and Astronomy
Abstract

Deposition of Bi on InSb(111)B reveals a striking Sierpiński-triangle (ST)-like structure in Bi thin films. Such a fractal geometric topology is further shown to turn off the intrinsic electronic topology in a thin film. Relaxation of a huge misfit strain of about 30% to 40% between Bi adlayer and substrate is revealed to drive the ST-like island formation. A Frenkel-Kontrova model is developed to illustrate the enhanced strain relief in the ST islands offsetting the additional step energy cost. Besides a sufficiently large tensile strain, forming ST-like structures also requires larger adlayer-substrate and intra-adlayer elastic stiffnesses, and weaker intra-adlayer interatomic interactions.

Comments
Description
Keywords
Citation
DOI
Collections