Copper Layers Deposited on Aluminum by Galvanic Displacement

dc.contributor.author Ai, Jiahe
dc.contributor.author Liu, S. P.
dc.contributor.author Hebert, Kurt R
dc.contributor.author Widharta, Newira
dc.contributor.author Adhikari, Saikat
dc.contributor.author Anderegg, James
dc.contributor.author Hebert, Kurt
dc.contributor.department Chemical and Biological Engineering
dc.date 2018-02-13T21:08:33.000
dc.date.accessioned 2020-06-30T01:10:45Z
dc.date.available 2020-06-30T01:10:45Z
dc.date.copyright Sat Jan 01 00:00:00 UTC 2011
dc.date.embargo 2014-02-10
dc.date.issued 2011-11-17
dc.description.abstract <p>Metallization layers nanometers to tens of nanometers thick are desirable for semiconductor interconnects, among other technologically relevant nanostructures. Whereas aqueous deposition of such films is economically attractive, fabrication of continuous layers is particularly challenging on oxidized substrates used in many applications. Here it is demonstrated that galvanic displacement can deposit thin adherent copper layers on aluminum foils and thin films from alkaline copper sulfate baths. According to scanning electron microscopy and quartz crystal microbalance measurements, the use of relatively low CuSO4 concentrations produced films composed of copper nanoparticles overlying a uniform continuous copper layer on the order of nanometers in thickness. It seems that there are no precedents for such thin layers formed by aqueous deposition on oxidized metals. The thin copper layers are explained by a mechanism in which copper ions are reduced by surface aluminum hydride on Al during alkaline dissolution.</p>
dc.description.comments <p>Reprinted with permission from <em>Journal of Physical Chemistry C</em> 115 (2011): 22354–22359, doi:<a href="http://dx.doi.org/10.1021/jp2054266" target="_blank">10.1021/jp2054266</a>. Copyright 2011 American Chemical Society.</p>
dc.format.mimetype application/pdf
dc.identifier archive/lib.dr.iastate.edu/cbe_pubs/72/
dc.identifier.articleid 1072
dc.identifier.contextkey 5096647
dc.identifier.s3bucket isulib-bepress-aws-west
dc.identifier.submissionpath cbe_pubs/72
dc.identifier.uri https://dr.lib.iastate.edu/handle/20.500.12876/13573
dc.language.iso en
dc.source.bitstream archive/lib.dr.iastate.edu/cbe_pubs/72/2011_AiJH_CopperLayersDeposited.pdf|||Sat Jan 15 01:43:48 UTC 2022
dc.source.uri 10.1021/jp2054266
dc.subject.disciplines Chemical Engineering
dc.subject.keywords Ames Laboratory
dc.title Copper Layers Deposited on Aluminum by Galvanic Displacement
dc.type article
dc.type.genre article
dspace.entity.type Publication
relation.isAuthorOfPublication 1c209ea4-85ad-49b9-aebd-14873e016053
relation.isOrgUnitOfPublication 86545861-382c-4c15-8c52-eb8e9afe6b75
File
Original bundle
Now showing 1 - 1 of 1
No Thumbnail Available
Name:
2011_AiJH_CopperLayersDeposited.pdf
Size:
1.66 MB
Format:
Adobe Portable Document Format
Description:
Collections