Frequency conversion analysis of noise in heterojunction bipolar transistor oscillators including periodically modulated noise sources

dc.contributor.advisor Robert J. Weber
dc.contributor.author Kramer, Bradley
dc.contributor.department Electrical and Computer Engineering
dc.date 2018-08-22T22:07:18.000
dc.date.accessioned 2020-06-30T07:05:04Z
dc.date.available 2020-06-30T07:05:04Z
dc.date.copyright Fri Jan 01 00:00:00 UTC 1993
dc.date.issued 1993
dc.description.abstract <p>A procedure which may be used to analyze the noise characteristics of HBT oscillators is presented. A large signal model of a HBT is developed based largely on the Gummel-Poon transistor model. A new base-emitter diffusion capacitance model is also generated which shows improved accuracy over conventional bipolar transistor models in characterizing HBTs. The large signal characteristics of the oscillator are then established using a time domain simulator. Conversion matrix theory is applied to the large signal model to generate an equivalent linear oscillator model which accounts for all of the frequency conversion effects which occur due to circuit nonlinearities. A bias dependent noise model of the HBT is also developed. It is found that the dominant sources of noise within the device are due to thermal, shot, and flicker noise. The modulation of the shot and flicker noise sources are also analyzed. The amount of frequency conversion which occurs as a result from the modulation of these noise sources is established. The modulated noise sources within the HBT are then inserted into the linear oscillator model to establish the overall noise characteristics of the HBT oscillator. Experimental results are also presented which support the validity of the analysis procedure;It Is found that the effects which result from the modulation of shot and flicker noise sources within oscillators are very significant. The upconversion of noise due to the modulation of flicker noise sources is found to be as significant as the upconversion which results from circuit nonlinearities. Thus, the upconversion of flicker noise cannot be associated with any one nonlinear mechanism. Rather it is a result of a complex interaction between the circuit nonlinearities and noise modulation mechanisms;The noise within many other periodically driven nonlinear networks may also be characterized using the analysis procedure presented in this paper. Examples of such networks include mixers, limiters, and frequency multipliers.</p>
dc.format.mimetype application/pdf
dc.identifier archive/lib.dr.iastate.edu/rtd/10467/
dc.identifier.articleid 11466
dc.identifier.contextkey 6404714
dc.identifier.doi https://doi.org/10.31274/rtd-180813-9732
dc.identifier.s3bucket isulib-bepress-aws-west
dc.identifier.submissionpath rtd/10467
dc.identifier.uri https://dr.lib.iastate.edu/handle/20.500.12876/63616
dc.language.iso en
dc.source.bitstream archive/lib.dr.iastate.edu/rtd/10467/r_9321184.pdf|||Fri Jan 14 18:21:25 UTC 2022
dc.subject.disciplines Electrical and Electronics
dc.subject.disciplines Electromagnetics and Photonics
dc.subject.disciplines Physics
dc.subject.keywords Electrical engineering and computer engineering
dc.subject.keywords Electrical engineering (Microelectronics)
dc.subject.keywords Microelectronics
dc.title Frequency conversion analysis of noise in heterojunction bipolar transistor oscillators including periodically modulated noise sources
dc.type article
dc.type.genre dissertation
dspace.entity.type Publication
relation.isOrgUnitOfPublication a75a044c-d11e-44cd-af4f-dab1d83339ff
thesis.degree.level dissertation
thesis.degree.name Doctor of Philosophy
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