White Beam Synchrotron X-Ray Topography of Gallium Arsenide

dc.contributor.author Winter, John
dc.contributor.author Green, Robert
dc.contributor.author Corak, William
dc.date 2018-02-14T04:08:25.000
dc.date.accessioned 2020-06-30T06:33:21Z
dc.date.available 2020-06-30T06:33:21Z
dc.date.copyright Fri Jan 01 00:00:00 UTC 1988
dc.date.issued 1988
dc.description.abstract <p>The defect structure of gallium arsenide is being examined using white beam transmission topography. The specimens under examination are cut-and-polished, three inch diameter, single crystal substrates from various suppliers in the “as received” condition. The goal of this continuing program is to first document the existence of various crystallographic defect structures and then to establish their effect on the performance of microwave integrated circuits subsequently fabricated on the wafers. Success in establishing such a correlation might permit the use of an x-ray diffraction measurement to screen incoming material, eliminating marginal substrates and achieving a corresponding increase in yield.</p>
dc.format.mimetype application/pdf
dc.identifier archive/lib.dr.iastate.edu/qnde/1988/allcontent/33/
dc.identifier.articleid 1644
dc.identifier.contextkey 5783435
dc.identifier.s3bucket isulib-bepress-aws-west
dc.identifier.submissionpath qnde/1988/allcontent/33
dc.identifier.uri https://dr.lib.iastate.edu/handle/20.500.12876/59113
dc.language.iso en
dc.source.bitstream archive/lib.dr.iastate.edu/qnde/1988/allcontent/33/1988_Winter_WhiteBeam.pdf|||Fri Jan 14 23:37:29 UTC 2022
dc.source.uri 10.1007/978-1-4613-0979-6_33
dc.subject.disciplines Electronic Devices and Semiconductor Manufacturing
dc.title White Beam Synchrotron X-Ray Topography of Gallium Arsenide
dc.type event
dc.type.genre article
dspace.entity.type Publication
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