A Resistorless Precision Curvature-Compensated Bandgap Voltage Reference Based on the VGO Extraction Technique

Abstract

This paper presents a resistorless curvaturecompensated bandgap voltage reference (BGR). The proposed method, using ratioed transistors and the inverse function technique, attempts to extract VGO, the bandgap voltage of silicon, by canceling out both the T and TlnT terms in the temperature characteristic of the bipolar junction transistor’s (BJT) base emitter voltage, VBE. The proposed design is implemented in the TSMC 180nm process. Simulation results show that the circuit can achieve temperature coefficients (TC) of less than 4.7ppm/oC from -20oC to 80oC over process variation and mismatch.