The hydrogenated amorphous silicon (a-Si:H) has been widely studied and used semiconductor. With all the excellent optical and electrical properties that it provides, there have been few characteristics which are not exactly understood till now that has hampered its extensive commercial use. Understanding the stability of these materials has been one of the major challenges being faced leading to extensive studies in past 25 years. It has been postulated that there are two different states in the sub-band gap of a-Si:H playing a dominant role. One state that has been proved and studied a lot is that of neutral dangling bonds and the other state being the charged dangling bonds. It has been known for some time that there are two distinct types of recovery during annealing of amorphous silicon after degradation during light soaking. While the previous studies of electron [mu][tau] (mobility lifetime) product Vs α (alpha) have been able to find these defects during the annealing, the plot is a straight line during degradation. The research studies the role of these charged defects in the degradation process and study for its kinetics during the exposure stage which has not been seen before. The results obtained from the stability experiments (exposure to xenon and subsequent annealing at different times) of oxygen doped films made in ECR-PECVD system have shown the conversion of negatively charged negatively correlated states into neutral dangling bonds with the capture of charge carriers; at a different energy location. These increased neutral dangling bonds explain for the decrease in photoconductivity. A quantitative model has been developed explaining the above kinetics and also supporting Adler's trap to dangling bond conversion model as shown by the changes in shape of the sub-gap absorption curve would change during the degradation, with a decrease in the region where the D−bonds exist, and an increase in the region where D0 exist. Most of the studies done at a particular energy failed to see the increase of these states which were at a different location in the gap and were clearly seen in α Vs E plots. The presence of these charged defects have been traced back to accidental O doping.