Aliovalent substitutions of the 2D layered semiconductor GeAs

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2019-08-01
Authors
Lee, Shannon
Owens-Baird, Bryan
Kovnir, Kirill
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Ames National LaboratoryChemistry
Abstract

Layered tetrel pnictides have shown promise as thermoelectrics (TEs) due to their anisotropic crystal structure and weak van der Waals interactions between layers. The binary GeAs is a p-type semiconductor with a narrow indirect bandgap of 0.57 eV and a high Seebeck coefficient (∼250 μV/K at 300 K). This work probes the limits of the aliovalent substitutions of GeAs to modify charge carrier concentration. GaxGe1-xAs (x = 0.005, 0.01, and 0.02) and GeAs1-ySey (y = 0.01, 0.02, 0.03, and 0.05) samples were synthesized to study the structure-property relationships in this system. Hole doping of GeAs via Ga-substitution increases carrier concentration resulting in the decrease in both resistivity and Seebeck coefficient. Se-substituted samples show more complex behavior related to defect chemistry. Overall, the thermoelectric power factor (S2/ρ) was significantly enhanced (up to 89%) for Ga0.005Ge0.995As as compared to pristine GeAs.

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