Synthesis of Interface-Driven Tunable Bandgap Metal Oxides

Date
2020-08-17
Authors
Rossini, Aaron
Chang, Boyce
Martin, Andrew
Thomas, Brijith
Li, Ang
Thuo, Martin
Dorn, Rick
Gong, Jinlong
Rossini, Aaron
Thuo, Martin
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Ames Laboratory
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Chemistry
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Ames LaboratoryElectrical and Computer EngineeringMaterials Science and EngineeringChemistryMicroelectronics Research Center (MRC)
Abstract

Mixed bandgap and bandgap tunability in semiconductors is critical in expanding their use. Composition alterations through single-crystal epitaxial growth and the formation of multilayer tandem structures are often employed to achieve mixed bandgaps, albeit with limited tunability. Herein, self-assembled one-dimensional coordination polymers provide facile synthons and templates for graphitic C-doped mesoporous oxides, gC-β-Ga2O3 or gC-In2O3 via controlled oxidative ligand ablation. These materials have mixed bandgaps and colors, depending on amount of gC present. The carbon/oxide interface leads to induced gap states, hence, a stoichiometrically tunable band structure. Structurally, a multiscale porous network percolating throughout the material is realized. The nature of the heat treatment and the top-down process allows for facile tunability and the formation of mixed bandgap metal oxides through controlled carbon deposition. As a proof of concept, gC-β-Ga2O3 was utilized as a photocatalyst for CO2 reduction, which demonstrated excellent conversion rates into CH4 and CO.

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This document is the unedited Author’s version of a Submitted Work that was subsequently accepted for publication in ACS Materials Letters, copyright © American Chemical Society after peer review. To access the final edited and published work see DOI: 10.1021/acsmaterialslett.0c00251. Posted with permission.

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