Using Temperature to Tune Film Roughness: Nonintuitive Behavior in a Simple System

Date
2000-07-24
Authors
Stoldt, C.
Caspersen, K.
Bartelt, M.
Jenks, Cynthia
Evans, James
Thiel, Patricia
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Altmetrics
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Research Projects
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Ames Laboratory
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Mathematics
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Chemistry
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Abstract

Ag(100) homoepitaxy constitutes one of the simplest systems in which to study thin-film growth. Yet we find that the roughness variation with temperature is extraordinarily complex. Specifically, as the deposition temperature is reduced from 300 to 50 K, the roughness of 25 monolayer films first increases, then decreases, then increases again. A transition from mound formation to self-affine (semifractal) growth occurs at ∼135 K. The underlying mechanisms are postulated. An atomistic model incorporating these mechanisms reproduces the experimental data quantitatively.

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This article is from Physical Review Letters 85, no. 4 (2000): 800–803, doi:10.1103/PhysRevLett.85.800.

Keywords
computer simulation, epitaxial growth, film frowth, mathematical models, phase transitions, random processes, scanning tunneling microscopy, temperature, thin films kinetic roughening, self affine growth, surface roughness
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