Electronically Induced Ferromagnetic Transitions in Sm5Ge4-Type Magnetoresponsive Phases

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2013-01-01
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Yao, Jinlei
Zhang, Yuemei
Wang, Peng
Lutz-Kappelman, Laura
Miller, Gordon
Mozharivskyj, Yurij
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Miller, Gordon
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Materials Science and Engineering
Materials engineers create new materials and improve existing materials. Everything is limited by the materials that are used to produce it. Materials engineers understand the relationship between the properties of a material and its internal structure — from the macro level down to the atomic level. The better the materials, the better the end result — it’s as simple as that.
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Materials Science and EngineeringChemistry
Abstract

The correlation between magnetic and structural transitions in Gd5SixGe4−x hampers the studies of valence electron concentration (VEC) effects on magnetism. Such studies require decoupling of the VEC-driven changes in the magnetic behavior and crystal structure. The designed compounds, Gd5GaSb3 and Gd5GaBi3, adopt the same Sm5Ge4-type structure as Gd5Ge4 while the VEC increases from 31  e−/formula in Gd5Ge4 to 33  e−/formula in Gd5GaPn3 (Pn: pnictide atoms). As a result, the antiferromagnetic ground state in Gd5Ge4 is tuned into the ferromagnetic one in Gd5GaPn3. First-principles calculations reveal that the nature of interslab magnetic interactions is changed by introducing extra p electrons into the conduction band, forming a ferromagnetic bridge between the adjacent [∝2Gd5T4] slabs.

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This article is from Physical Review Letters 110 (2013): 1, doi:10.1103/PhysRevLett.110.077204. Posted with permission.

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Tue Jan 01 00:00:00 UTC 2013
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