10-30-eV optical properties of GaN

Thumbnail Image
Date
1981-10-01
Authors
Olson, C. G.
Zehe, A.
Major Professor
Advisor
Committee Member
Journal Title
Journal ISSN
Volume Title
Publisher
Authors
Person
Research Projects
Organizational Units
Organizational Unit
Physics and Astronomy
Physics and astronomy are basic natural sciences which attempt to describe and provide an understanding of both our world and our universe. Physics serves as the underpinning of many different disciplines including the other natural sciences and technological areas.
Journal Issue
Is Version Of
Versions
Series
Abstract

The reflectance of basal-plane epitaxial layers of GaN has been measured between 5 and 30 eV, and Kramers-Kronig analyzed to get the dielectric function and the electron-energy-loss function. The second derivative of the reflectance with respect to energy was obtained in the region of Ga 3d→ conduction-band excitations. The latter show weak structure from transitions to Γ final states and stronger structures to final states along U, both split by the 0.40-eV Ga 3d spin-orbit splitting. The loss function exhibits two peaks, the stronger one at 19.0 eV, below the expected 23.3 eV, while the weaker one is at 23.2 eV.

Comments

This article is from Physical Review B 24 (1981): 4629, doi:10.1103/PhysRevB.24.4629. Posted with permission.

Description
Keywords
Citation
DOI
Copyright
Thu Jan 01 00:00:00 UTC 1981
Collections