Ultrasonic Sensing Simulation of CdTe Single Crystal Growth

Date
1993
Authors
Lu, Yichi
Wadley, Haydn
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Altmetrics
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Abstract

Today’s infrared detector arrays consist of Hg1-xCdxTe deposited upon lattice matched Cd1-xZnxTe substrate wafers. Very high quality Cd1-xZnxTe crystals must be grown so that substrate wafer defects do not degrade the detector’s performance. Usually, the Cd1-xZnxTe crystals are grown by a Bridgman technique in which a charge is melted in a cylindrical quartz ampoule and slowly withdrawn from the hot zone (at ~ 1100°C) of a furnace.1 The best quality crystal is obtained from material solidified under plane front conditions.2 This is difficult to achieve, and a need has arisen for insitu sensing of the growth process to characterize, and ultimately control, the interface shape.

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