Synthesis and characterization of Ca-doped LaMnAsO

Date
2018-05-01
Authors
Liu, Yong
Straszheim, Warren
Das, Pinaki
Islam, Farhan
Heitmann, Thomas
McQueeney, Robert
Vaknin, David
Journal Title
Journal ISSN
Volume Title
Publisher
Altmetrics
Authors
Research Projects
Organizational Units
Ames Laboratory
Organizational Unit
Physics and Astronomy
Organizational Unit
Journal Issue
Series
Abstract

We report on our attempt to hole-dope the antiferromagnetic semiconductor LaMnAsO by substitution of the La3+ site by Ca2+. We use neutron and x-ray diffraction, magnetic susceptibility, and transport techniques to characterize polycrystalline (La1−xCax)MnAsO samples prepared by solid-state reaction and find that the parent compound is highly resistant to substitution with an upper limit x≤0.01. Magnetic susceptibility of the parent and the x=0.002(xnom=0.04) compounds indicate a negligible presence of magnetic impurities (i.e., MnO or MnAs). Rietveld analysis of neutron and x-ray diffraction data shows the preservation of both the tetragonal (P4/nmm) structure upon doping and the antiferromagnetic ordering temperature, TN=355±5 K.

Description
Keywords
Citation
DOI
Collections