Beam profile reflectometry: a new technique for thin film measurements Fanton, J. Opsal, J. Willenborg, D. Kelso, S. Rosencwaig, Allan 2018-02-14T02:55:16.000 2020-06-30T06:41:39Z 2020-06-30T06:41:39Z Fri Jan 01 00:00:00 UTC 1993 1993
dc.description.abstract <p>In the manufacture of semiconductor devices, it is of critical importance to know the thickness and material properties of various dielectric and semiconducting thin films. Although there are many techniques for measuring these films, the most commonly used are reflection spectrophotometry [1,2] and ellipsometry [3]. In the former method, the normal- incidence reflectivity is measured as a function of wavelength. The shape of the reflectivity spectrum is then analyzed using the Fresnel equations to determine the thickness of the film. In some cases, the refractive index can also be determined provided that the dispersion of the optical constants are well known. The latter method consists of reflecting a beam of known polarization off the sample surface at an oblique angle. The film thickness, and in some cases the refractive index, can be determined from the change in polarization experienced upon reflection.</p>
dc.format.mimetype application/pdf
dc.identifier archive/
dc.identifier.articleid 1287
dc.identifier.contextkey 5774061
dc.identifier.s3bucket isulib-bepress-aws-west
dc.identifier.submissionpath qnde/1993/allcontent/50
dc.language.iso en
dc.source.bitstream archive/|||Sat Jan 15 00:40:47 UTC 2022
dc.source.uri 10.1007/978-1-4615-2848-7_50
dc.subject.disciplines Atomic, Molecular and Optical Physics
dc.subject.disciplines Optics
dc.subject.disciplines Plasma and Beam Physics
dc.subject.disciplines Semiconductor and Optical Materials
dc.title Beam profile reflectometry: a new technique for thin film measurements
dc.type event
dc.type.genre article
dspace.entity.type Publication
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