Competition between area and height evolution of Pb islands on a Si(111) surface

Date
2009-03-01
Authors
Li, M.
Wang, Cai-Zhuang
Evans, James
Hupalo, Myron
Evans, James
Tringides, Michael
Ho, Kai-Ming
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Ames Laboratory
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Physics and Astronomy
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Mathematics
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Abstract

Scanning tunneling microscopy experiments reveal that small Pb islands with unstable heights, e.g., four layers, on a Si(111) surface decay during coarsening, whereas large islands do not decay but grow to a stable height. This bifurcation in evolution is analyzed by incorporating quantum size effects into theoretical models for island growth dynamics with appropriate geometries. The effective energy barrier for Pb atoms to reach the top of four-layer islands is estimated at about 0.26 eV.

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<p>This article is from <em>Physical Review B</em> 79 (2009): 113404, doi:<a href="http://dx.doi.org/10.1103/PhysRevB.79.113404" target="_blank">10.1103/PhysRevB.79.113404 </a> Posted with permission.</p>
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