How arsenic makes amorphous GeSe a robust chalcogenide glass for advanced memory integration
Date
2022-05-24
Authors
Gu, Rongchuan
Xu, Meng
Qiao, Chong
Wang, Cai-Zhuang
Ho, Kai-Ming
Wang, Songyou
Xu, Ming
Miao, Xiangshui
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Iowa State University Digital Repository, Ames IA (United States)
Abstract
The 3D integration technology in semiconductor fabrication requires a key component, the ovonic threshold switching (OTS) selector, to suppress the current leakage. The As doped amorphous (a-) GeSe glass is a commercialized OTS material in 3D phase-change memory, but the understanding of such a doping mechanism is still inadequate. Here we systematically explore the effect of As doping on the structural, bonding, and dynamics properties of a-GeAsSe using ab initio molecular dynamics simulations. The results reveal that As atoms form strong bonds with both Ge and Se atoms. The distorted octahedral structures and the 5-fold rings linked by atoms are increased. All of these structural features lead to a more disordered configuration. Moreover, As atoms have notably slowed down the atomic mobility, rendering a-GeAsSe a high stability. Our studies offer insightful understanding of As-doping in OTS materials, paving the way for the design and application of advanced selector devices.
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IS-J 10813
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article
Comments
This is a manuscript of an article published as Gu, Rongchuan, Meng Xu, Chong Qiao, Cai-Zhuang Wang, Kai-Ming Ho, Songyou Wang, Ming Xu, and Xiangshui Miao. "How arsenic makes amorphous GeSe a robust chalcogenide glass for advanced memory integration." Scripta Materialia 218 (2022): 114834.
DOI: 10.1016/j.scriptamat.2022.114834.
Copyright 2022 Acta Materialia Inc.
Posted with permission.
DOE Contract Number(s): AC02-07CH11358; 62174060; 2021GCRC051; 2020M682387; 18JC1411500.