Campbell penetration depth in low carrier density superconductor YPtBi

dc.contributor.author Kim, Hyunsoo
dc.contributor.author Tanatar, Makariy
dc.contributor.author Hodovanets, Halyna
dc.contributor.author Wang, Kefeng
dc.contributor.author Paglione, Johnpierre
dc.contributor.author Prozorov, Ruslan
dc.contributor.department Ames Laboratory
dc.contributor.department Physics and Astronomy
dc.date 2021-07-30T19:57:03.000
dc.date.accessioned 2021-08-14T01:37:47Z
dc.date.available 2021-08-14T01:37:47Z
dc.date.issued 2021-07-16
dc.description.abstract <p>Magnetic penetration depth, λm, was measured as a function of temperature and magnetic field in single crystals of low carrier density superconductor YPtBi by using a tunnel-diode oscillator technique. Measurements in zero DC magnetic field yield London penetration depth, λL(T), but in the applied field the signal includes the Campbell penetration depth, λC(T), which is the characteristic length of the attenuation of small excitation field, HAC, into the Abrikosov vortex lattice due to its elasticity. Whereas the magnetic field dependent λC exhibit λC∼Bp with p=1/2 in most of the conventional and unconventional superconductors, we found that p≈0.23≪1/2 in YPtBi due to rapid suppression of the pinning strength. From the measured λC(T,H), the critical current density is jc≈40A/cm2 at 75 mK. This is orders of magnitude lower than that of conventional superconductors of comparable Tc.</p>
dc.identifier archive/lib.dr.iastate.edu/ameslab_manuscripts/958/
dc.identifier.articleid 1961
dc.identifier.contextkey 24098477
dc.identifier.s3bucket isulib-bepress-aws-west
dc.identifier.submissionpath ameslab_manuscripts/958
dc.identifier.uri https://dr.lib.iastate.edu/handle/20.500.12876/JvNVQdMv
dc.language.iso en
dc.relation.ispartofseries IS-J 10551
dc.source.bitstream archive/lib.dr.iastate.edu/ameslab_manuscripts/958/IS_J_10551.pdf|||Sat Jan 15 02:34:50 UTC 2022
dc.source.uri 10.1103/PhysRevB.104.014510
dc.subject.disciplines Condensed Matter Physics
dc.title Campbell penetration depth in low carrier density superconductor YPtBi
dc.type article
dc.type.genre article
dspace.entity.type Publication
relation.isOrgUnitOfPublication 25913818-6714-4be5-89a6-f70c8facdf7e
relation.isOrgUnitOfPublication 4a05cd4d-8749-4cff-96b1-32eca381d930
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