Origin of spin gapless semiconductor behavior in CoFeCrGa: Theory and Experiment

dc.contributor.author Bainsla, Lakhan
dc.contributor.author Mallick, A.
dc.contributor.author Manivel Raja, M.
dc.contributor.author Coelho, A.
dc.contributor.author Nigam, A.
dc.contributor.author Johnson, Duane
dc.contributor.author Alam, Aftab
dc.contributor.author Suresh, K.
dc.contributor.department Ames National Laboratory
dc.date 2018-02-16T23:57:44.000
dc.date.accessioned 2020-06-29T23:26:23Z
dc.date.available 2020-06-29T23:26:23Z
dc.date.copyright Thu Jan 01 00:00:00 UTC 2015
dc.date.issued 2015-07-15
dc.description.abstract <p>Despite a plethora of materials suggested for spintronic applications, a new class of materials has emerged, namely spin gapless semiconductors (SGS), which offers potentially more advantageous properties than existing ones. These magnetic semiconductors exhibit a finite band gap for one spin channel and a closed gap for the other. Here, supported by electronic-structure calculations, we report evidence of SGS behavior in equiatomic quaternary CoFeCrGa, having a cubic Heusler (prototype LiMgPdSn) structure but exhibiting chemical disorder (DO3 structure). CoFeCrGa is found to transform from SGS to half-metallic phase under pressure, which is attributed to unique electronic-structure features. The saturation magnetization (MS) obtained at 8K agrees with the Slater-Pauling rule and the Curie temperature (TC) is found to exceed 400K. Carrier concentration (up to 250K) and electrical conductivity are observed to be nearly temperature independent, prerequisites for SGS. The anomalous Hall coefficient is estimated to be 185S/cm at 5K. Considering the SGS properties and high TC, this material appears to be promising for spintronic applications.</p>
dc.description.comments <p>This article is from Phys. Rev. B <strong>92</strong>, 045201 (2015), doi:<a href="http://dx.doi.org/10.1103/PhysRevB.92.045201" target="_blank">10.1103/PhysRevB.92.04520</a>1. Posted with permission.</p>
dc.format.mimetype application/pdf
dc.identifier archive/lib.dr.iastate.edu/ameslab_pubs/269/
dc.identifier.articleid 1268
dc.identifier.contextkey 7548638
dc.identifier.s3bucket isulib-bepress-aws-west
dc.identifier.submissionpath ameslab_pubs/269
dc.identifier.uri https://dr.lib.iastate.edu/handle/20.500.12876/7822
dc.language.iso en
dc.source.bitstream archive/lib.dr.iastate.edu/ameslab_pubs/269/2015_Bainsla_OriginSpin.pdf|||Fri Jan 14 23:04:23 UTC 2022
dc.source.uri 10.1103/PhysRevB.92.045201
dc.subject.disciplines Condensed Matter Physics
dc.subject.disciplines Engineering Physics
dc.subject.disciplines Metallurgy
dc.subject.keywords Materials Science and Engineering
dc.title Origin of spin gapless semiconductor behavior in CoFeCrGa: Theory and Experiment
dc.type article
dc.type.genre article
dspace.entity.type Publication
relation.isAuthorOfPublication ed24845f-863f-4613-9f76-130602a21b4a
relation.isOrgUnitOfPublication 25913818-6714-4be5-89a6-f70c8facdf7e
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