Reflectance anisotropy of Gd5Si2Ge2 and Tb5Si2.2Ge1.8

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2004-03-15
Authors
Lograsso, Thomas
Lynch, David
Schlagel, Deborah
Lee, S. J.
Park, Joong Mok
Snyder, J.
Jiles, David
Schlagel, Deborah
Jiles, David
Lograsso, Thomas
Pecharsky, A.
Lynch, David
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Ames Laboratory
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Abstract

Reflectance difference (RD) spectra for the ab plane of the single crystals of Gd5Si2Ge2and bc planes of Gd5Si2Ge2 and Tb5Si2.2Ge1.8 were obtained in the photon energy range of 1.5–5.5 eV. Several peaks were observed for these crystals in the measured spectrum range. Similar features were observed in the RD spectra for the bc planes ofGd5Si2Ge2 and Tb5Si2.2Ge1.8, while different features were observed for the ab plane and bc plane of Gd5Si2Ge2. The RD spectra for the crystals arise not only from the surface anisotropy but also from the bulk anisotropy due to the monoclinic structure of the bulk crystal.

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The following article appeared in Applied Physics Letters 84 (2004): 1865 and may be found at http://dx.doi.org/10.1063/1.1687463.

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