Reflectance anisotropy of Gd5Si2Ge2 and Tb5Si2.2Ge1.8

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2004-03-15
Authors
Lee, S. J.
Park, Joong Mok
Snyder, J.
Pecharsky, A.
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Abstract

Reflectance difference (RD) spectra for the a–b plane of the single crystals of Gd5Si2Ge2and b–c planes of Gd5Si2Ge2 and Tb5Si2.2Ge1.8 were obtained in the photon energy range of 1.5–5.5 eV. Several peaks were observed for these crystals in the measured spectrum range. Similar features were observed in the RD spectra for the b–c planes ofGd5Si2Ge2 and Tb5Si2.2Ge1.8, while different features were observed for the a–b plane and b–c plane of Gd5Si2Ge2. The RD spectra for the crystals arise not only from the surface anisotropy but also from the bulk anisotropy due to the monoclinic structure of the bulk crystal.
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The following article appeared in Applied Physics Letters 84 (2004): 1865 and may be found at http://dx.doi.org/10.1063/1.1687463.
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Thu Jan 01 00:00:00 UTC 2004
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Condensed Matter Physics
Metallurgy
Keywords
Physics and Astronomy, Ge-Si alloys, gadolinium alloys, terbium alloys, crystal structure, surface states, ab initio calculations, reflectivity, visible spectra
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https://dr.lib.iastate.edu/handle/20.500.12876/7670
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http://doi.org/10.1063/1.1687463
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