Weak Anti-localization and Quantum Oscillations of Surface States in Topological Insulator Bi2Se2Te

dc.contributor.author Lograsso, Thomas
dc.contributor.author Bao, Lihong
dc.contributor.author He, Liang
dc.contributor.author Tuttle, Gary
dc.contributor.author Meyer, Nicholas
dc.contributor.author Kou, Xufeng
dc.contributor.author Zhang, Peng
dc.contributor.author Chen, Zhi-gang
dc.contributor.author Fedorov, Alexei
dc.contributor.author Riedemann, Trevor
dc.contributor.author Lograsso, Thomas
dc.contributor.author Wang, Kang
dc.contributor.author Tuttle, Gary
dc.contributor.author Xiu, Faxian
dc.contributor.department Ames Laboratory
dc.date 2018-02-13T14:36:42.000
dc.date.accessioned 2020-06-29T23:25:10Z
dc.date.available 2020-06-29T23:25:10Z
dc.date.embargo 2013-09-23
dc.date.issued 2012-10-11
dc.description.abstract <p>Topological insulators, a new quantum state of matter, create exciting opportunities for studying topological quantum physics and for exploring spintronic applications due to their gapless helical metallic surface states. Here, we report the observation of weak anti-localization and quantum oscillations originated from surface states in Bi2Se2Te crystals. Angle-resolved photoemission spectroscopy measurements on cleaved Bi2Se2Te crystals show a well-defined linear dispersion without intersection of the conduction band. The measured weak anti-localization effect agrees well with the Hikami-Larkin-Nagaoka model and the extracted phase coherent length shows a power-law dependence with temperature ( ∼T<sup>−0.44</sup>), indicating the presence of the surface states. More importantly, the analysis of a Landau-level fan diagram of Shubnikov-de Hass oscillations yields a finite Berry phase of ∼0.42π, suggesting the Dirac nature of the surface states. Our results demonstrate that Bi2Se2Te can serve as a suitable topological insulator candidate for achieving intrinsic quantum transport of surface Dirac fermions.</p>
dc.description.comments <p>This article is from <em>Scientific Reports</em> 2 (2012): 726, doi:<a href="http://dx.doi.org/10.1038/srep00726" target="_blank">10.1038/srep00726</a>.</p>
dc.format.mimetype application/pdf
dc.identifier archive/lib.dr.iastate.edu/ameslab_pubs/114/
dc.identifier.articleid 1113
dc.identifier.contextkey 4615544
dc.identifier.s3bucket isulib-bepress-aws-west
dc.identifier.submissionpath ameslab_pubs/114
dc.identifier.uri https://dr.lib.iastate.edu/handle/20.500.12876/7654
dc.language.iso en
dc.source.bitstream archive/lib.dr.iastate.edu/ameslab_pubs/114/2012_BaoL_WeakAntilocalizationQuantum.pdf|||Fri Jan 14 18:49:04 UTC 2022
dc.source.uri 10.1038/srep00726
dc.subject.disciplines Condensed Matter Physics
dc.subject.disciplines Electrical and Computer Engineering
dc.subject.disciplines Metallurgy
dc.subject.keywords Electrical and Computer Engineering
dc.title Weak Anti-localization and Quantum Oscillations of Surface States in Topological Insulator Bi2Se2Te
dc.type article
dc.type.genre article
dspace.entity.type Publication
relation.isAuthorOfPublication 316ee29f-99a9-49bc-a048-0f43caf97aa5
relation.isAuthorOfPublication 70749c83-c115-4fad-89ac-918d94eba38b
relation.isOrgUnitOfPublication 25913818-6714-4be5-89a6-f70c8facdf7e
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