Electron mobility in nanocrystalline silicon devices

Abstract

<p>Electron mobility in the growth direction was measured using space charge limited current techniques in device-type <em>nin</em> structure nanocrystalline Si:H and nanocrystalline Ge:H structures. The films were grown on stainless steel foil using either hot wire or remote plasma enhanced chemical vapor deposition techniques. Grain size and crystallinity were measured using x ray and Raman spectroscopy. The size of grains in films was adjusted by changing the deposition conditions. It was found that large ⟨220⟩ grain sizes (∼56nm)" role="presentation" style="display: inline; line-height: normal; word-spacing: normal; word-wrap: normal; white-space: nowrap; float: none; direction: ltr; max-width: none; max-height: none; min-width: 0px; min-height: 0px; border: 0px; padding: 0px 2px 0px 0px; margin: 0px; position: relative;">(∼56nm)(∼56nm) could be obtained using the hot wire deposition technique, and the conductivity mobility at room temperature was measured to be 5.4cm2∕Vs" role="presentation" style="display: inline; line-height: normal; word-spacing: normal; word-wrap: normal; white-space: nowrap; float: none; direction: ltr; max-width: none; max-height: none; min-width: 0px; min-height: 0px; border: 0px; padding: 0px 2px 0px 0px; margin: 0px; position: relative;">5.4cm2/Vs5.4cm2∕Vs in films with such large grains. The plasma-grown films had smaller grains and smaller mobilities. The mobility was found to increase with increasing grain size and with increasing temperature.</p>