Sub-Bandgap Laser Probing of GaAs Devices and Circuits Mechtel, D. Andreou, A. Christodoulides, D. Wagner, J. Westgate, C. Palmer, C. Poehler, T. 2018-02-14T04:08:10.000 2020-06-30T06:33:20Z 2020-06-30T06:33:20Z Fri Jan 01 00:00:00 UTC 1988 1988
dc.description.abstract <p>Standard methods for measuring solid-state device and circuit performance are inadequate at GHz speeds because they introduce parasitic inductances and capacitances that change circuit operation and characteristics. One promising noninvasive procedure that avoids these problems uses electro-optic probing to yield information on device packaging techniques; and on device and circuit performance characteristics such as voltage waveforms, timing, and propagation delays in both analog and digital circuits.</p>
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dc.identifier archive/
dc.identifier.articleid 1642
dc.identifier.contextkey 5783433
dc.identifier.s3bucket isulib-bepress-aws-west
dc.identifier.submissionpath qnde/1988/allcontent/31
dc.language.iso en
dc.relation.ispartofseries Review of Progress in Quantitative Nondestructive Evaluation
dc.source.bitstream archive/|||Fri Jan 14 23:30:05 UTC 2022
dc.source.uri 10.1007/978-1-4613-0979-6_31
dc.subject.disciplines Electronic Devices and Semiconductor Manufacturing
dc.title Sub-Bandgap Laser Probing of GaAs Devices and Circuits
dc.type event
dc.type.genre article
dspace.entity.type Publication
relation.isSeriesOfPublication 289a28b5-887e-4ddb-8c51-a88d07ebc3f3
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