High pressures and the Kondo gap in Ce3Bi4Pt3

dc.contributor.author Cooley, JC
dc.contributor.author Aronson, MC
dc.contributor.author Canfield, Paul
dc.contributor.department Ames National Laboratory
dc.date.accessioned 2022-08-04T16:26:11Z
dc.date.available 2022-08-04T16:26:11Z
dc.date.issued 1997-03-15
dc.description.abstract We have measured the electrical resistivity p(T) of single crystals of Ce-3Bi4Pt3 for temperatures from 1.2 to 300 K, and pressures from I bar to 145 kbar. The transport is dominated at high temperatures by excitations across a small activation gap a, which increases rapidly with pressure. The low-temperature transport involves variable range hopping among extrinsic states in the gap. The spatial extent of the in-gap states reflects coupling to conduction-electron states, and is strongly modified as pressure enhances Delta. Despite the strong pressure dependence of Delta, a direct correspondence between single-ion energetics and the measured gap is maintained, and the role of valence fluctuations is minimal even at the highest pressures.
dc.description.comments This article is published as Cooley, J. C., M. C. Aronson, and P. C. Canfield. "High pressures and the Kondo gap in Ce3Bi4Pt3." Physical Review B 55, no. 12 (1997): 7533. DOI: 10.1103/PhysRevB.55.7533. Copyright 1997 American Physical Society. Posted with permission.
dc.identifier.uri https://dr.lib.iastate.edu/handle/20.500.12876/dv6l1B9z
dc.language.iso en
dc.publisher American Physical Society
dc.source.uri https://doi.org/10.1103/PhysRevB.55.7533 *
dc.title High pressures and the Kondo gap in Ce3Bi4Pt3
dc.type Article
dspace.entity.type Publication
relation.isAuthorOfPublication c5a8128b-7d98-4b8f-92d7-b1385e345713
relation.isOrgUnitOfPublication 25913818-6714-4be5-89a6-f70c8facdf7e
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