An Integrated 700–1200 MHz Class-F PA with Tunable Harmonic Terminations in 0.13μm CMOS
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A fully integrated class-F power amplifier (PA) with reconfigurable harmonic termination over a wide range of frequencies is presented. Reconfigurability is achieved by utilizing on-chip transformers as part of the output matching network. In addition, a stacked transistor architecture was used to boost the output power. The PA was fabricated in a 0.13- μm CMOS process and packaged in a 20-pin quad flat no-leads package. It was configured to operate at 700, 900, and 1200 MHz with a maximum measured saturated output power of +24.6 dBm with a power-added efficiency of 48.3%. The measured gain was 16.5 dB and was flat over the entire bandwidth. The total chip area, including pads, is 1.5 mm × 1.5 mm.
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This is a manuscript of an article published as Sessou, Kossi K., and Nathan M. Neihart. "An Integrated 700–1200 MHz Class-F PA with Tunable Harmonic Terminations in 0.13μm CMOS." IEEE Transactions on Microwave Theory and Techniques 63, no. 4 (2015): 1315-1323. DOI: 10.1109/TMTT.2015.2403843. Posted with permission.