The defect structure of gallium arsenide is being examined using white beam transmission topography. The specimens under examination are cut-and-polished, three inch diameter, single crystal substrates from various suppliers in the “as received” condition. The goal of this continuing program is to first document the existence of various crystallographic defect structures and then to establish their effect on the performance of microwave integrated circuits subsequently fabricated on the wafers. Success in establishing such a correlation might permit the use of an x-ray diffraction measurement to screen incoming material, eliminating marginal substrates and achieving a corresponding increase in yield.